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Article Dans Une Revue Solid-State Electronics Année : 2017

Impact of series resistance on the operation of junctionless transistors

Résumé

Transconductance (gm) and its derivative (dgm/dVg) of junctionless transistors (JLTs), considered as a possible candidate for future CMOS technology, show their unique operation properties such as bulk neutral and surface accumulation conduction. However, source/drain series resistance (Rsd) causes significant degradation of intrinsic gm and dgm/dVg behavior in JLTs. In this letter, the Rsd effects on the operation of JLTs were investigated in detail and also verified with analytical modeling equations. This work provides helpful information for a better understanding of the operation mechanism of JLTs with de-embedded Rsd effects.
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Dates et versions

hal-01947990 , version 1 (07-12-2018)

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Citer

Dae-Young Jeon, So Jeong Jeon, Mireille Mouis, Sylvain Barraud, Gyu-Tae Kim, et al.. Impact of series resistance on the operation of junctionless transistors. Solid-State Electronics, 2017, 129, pp.103-107. ⟨10.1016/j.sse.2016.12.004⟩. ⟨hal-01947990⟩
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