New Y -function based MOSFET parameter extraction method from weak to strong inversion range

J.B. Henry (1, 2) , Q. Rafhay (1) , A. Cros (2) , G. Ghibaudo (1)

1 IMEP-LAHC - Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation
2 ST-CROLLES - STMicroelectronics [Crolles]

A new Y-function based MOSFET parameter extraction method is proposed. This method relies on explicit expressions of inversion charge and drain current versus Yc(=Qi√Cgc)-function and Y(=Id/√gm)-function, respectively, applicable from weak to strong inversion range. It enables a robust MOSFET parameter extraction even for low gate voltage overdrive, whereas conventional extraction techniques relying on strong inversion approximation fail.

Mots clés: Parameter extraction; MOSFET; Low gate voltage

Domaines: Micro et nanotechnologies/Microélectronique

J.B. Henry, Q. Rafhay, A. Cros, G. Ghibaudo. New Y -function based MOSFET parameter extraction method from weak to strong inversion range. Solid-State Electronics, 2016, 123, pp.84-88. ⟨10.1016/j.sse.2016.06.004⟩. ⟨hal-01947687⟩