Resistive memory variability: A simplified trap-assisted tunneling model

Daniele Garbin (1, 2) , Elisa Vianello (1) , Quentin Rafhay (2) , Mourad Azzaz (3) , Philippe Candelier (4) , Barbara Desalvo (1) , Gérard Ghibaudo (2) , Luca Perniola (1)

1 CEA-LETI - Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information
2 IMEP-LAHC - Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation
3 ST-CROLLES - STMicroelectronics [Crolles]
4 ST-GRENOBLE - STMicroelectronics [Grenoble]

This work presents a model that allows to explain the resistance variability of OxRAM devices, both in high and low resistive states. This model is based on the calculation of a 3D resistance network, using trap assisted tunneling current. The stochastic nature of the resistance is captured by random placement of traps within a specific spatial distribution. The model is able to capture both cycle-to-cycle (temporal) and device-to-device (spatial) variability.

Mots clés: OxRAM; Variability; RRAM; Trap assisted tunneling

Domaines: Micro et nanotechnologies/Microélectronique

Daniele Garbin, Elisa Vianello, Quentin Rafhay, Mourad Azzaz, Philippe Candelier, et al.. Resistive memory variability: A simplified trap-assisted tunneling model. Solid-State Electronics, 2016, 115, pp.126-132. ⟨10.1016/j.sse.2015.09.004⟩. ⟨hal-01947671⟩