Compact modeling of subthreshold swing in double gate and nanowire MOSFETs, for Si and GaAs channel materials

G. Hiblot (1, 2) , Q. Rafhay (1) , F. Boeuf (2) , G. Ghibaudo (1)

1 IMEP-LAHC - Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation
2 ST-CROLLES - STMicroelectronics [Crolles]

In this work, an analytical model for the subthreshold swing of double gate and cylindrical nanowire MOSFETs is proposed. Using the Voltage Doping Transform, it is shown that a one-dimensional potential model is sufficient to obtain a high accuracy, provided that an effective oxide thickness is used. The validity of this model is then confirmed with TCAD simulations. Finally, the impact of quantum effects is discussed. Based on Density-Gradient simulations of Si and GaAs MOSFETs, it is shown that the model is still valid when quantum effects are accounted for.

Mots clés: Density-Gradient; III–V; Double gate; Nanowire; Compact modeling; Subthreshold swing

Domaines: Micro et nanotechnologies/Microélectronique

G. Hiblot, Q. Rafhay, F. Boeuf, G. Ghibaudo. Compact modeling of subthreshold swing in double gate and nanowire MOSFETs, for Si and GaAs channel materials. Solid-State Electronics, 2015, 111, pp.188-195. ⟨10.1016/j.sse.2015.06.008⟩. ⟨hal-01947653⟩