Evaluating injection and transport properties of organic field-effect transistors by the convergence point in transfer-length method

Chuan Liu (1) , Yong Xu (1) , Gérard Ghibaudo (2) , Xubing Xu (3) , Takeo Minari (4) , Yong Noh (1)

1 Department of Energy and Materials Engineering - Dongguk University, Seoul
2 IMEP-LAHC - Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation
3 South China Normal University - Guangzhou
4 NIMS - National Institute for Materials Science

Contact resistance (RC), which dominates the performance of organic field-effect transistors (OFETs), relates multiple factors such as charge injection, transport, and device architecture. Here, we focus on physical meaning of the convergence point in conventional transfer-length method, and clarify the correlation between charge injection and geometrical parameters of OFETs by simulations. We also defined the effect of band-like/hopping transport in semiconductor on the charge injection process, where less hopping transport results in lower and less gate-voltage dependent RC. These results were confirmed by experiments on pentacene OFETs and reveal the values of convergence point in OFET research.

Domaines: Micro et nanotechnologies/Microélectronique

Chuan Liu, Yong Xu, Gérard Ghibaudo, Xubing Xu, Takeo Minari, et al.. Evaluating injection and transport properties of organic field-effect transistors by the convergence point in transfer-length method. Applied Physics Letters, 2014, 104 (1), pp.013301. ⟨10.1063/1.4860958⟩. ⟨hal-01947594⟩