Bonding mechanism of a yttrium iron garnet film on Si without the use of an intermediate layer

Konstantinos Pantzas (1) , Gilles Patriarche (2) , Anne Talneau (2) , Jamal Ben Youssef (3)

1 Georgia Tech Lorraine [Metz]
2 LPN - Laboratoire de photonique et de nanostructures
3 LMB - Laboratoire de magnétisme de Bretagne

Domaines: Physique [physics]; Matière Condensée [cond-mat]

Konstantinos Pantzas, Gilles Patriarche, Anne Talneau, Jamal Ben Youssef. Bonding mechanism of a yttrium iron garnet film on Si without the use of an intermediate layer. Applied Physics Letters, 2014, 105 (14), pp.141601. ⟨hal-01945923⟩