X-ray photoelectron diffraction study of thin Al 2 O 3 films grown on Si(111) by molecular beam epitaxy - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Physical Review B: Condensed Matter and Materials Physics (1998-2015) Année : 2009

X-ray photoelectron diffraction study of thin Al 2 O 3 films grown on Si(111) by molecular beam epitaxy

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hal-01939930 , version 1 (29-11-2018)

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  • HAL Id : hal-01939930 , version 1

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M. El Kazzi, G. Grenet, C. Merckling, Guillaume Saint-Girons, C. Botella, et al.. X-ray photoelectron diffraction study of thin Al 2 O 3 films grown on Si(111) by molecular beam epitaxy. Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2009, 79 (19). ⟨hal-01939930⟩
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