Growth of crystalline γ‐Al2O3 on Si by molecular beam epitaxy: Influence of the substrate orientation

C. Merckling , M. El-Kazzi , Guillaume Saint-Girons (1) , G. Hollinger (1) , L. Largeau (2) , G. Patriarche (2) , V. Favre-Nicolin (3) , O. Marty (4)

1 INL - H&N - INL - Hétéroepitaxie et Nanostructures
2 LPN - Laboratoire de photonique et de nanostructures
3 SP2M - UMR 9002 - Service de Physique des Matériaux et Microstructures
4 LENAC - Laboratoire d'Electronique, Nanotechnologies, Capteurs

Domaines: Science des matériaux [cond-mat.mtrl-sci]

C. Merckling, M. El-Kazzi, Guillaume Saint-Girons, G. Hollinger, L. Largeau, et al.. Growth of crystalline γ‐Al2O3 on Si by molecular beam epitaxy: Influence of the substrate orientation. Journal of Applied Physics, 2007, 102 (2), pp.024101. ⟨hal-01939912⟩