Pseudomorphic molecular beam epitaxy growth of γ-Al2O3(001) on Si(001) and evidence for spontaneous lattice reorientation during epitaxy

C. Merckling (1, 2) , M. El-Kazzi (2) , G. Delhaye (2) , M. Gendry (2) , Guillaume Saint-Girons (2) , G. Hollinger (2) , L. Largeau (3) , G. Patriarche (3)

1 ST-CROLLES - STMicroelectronics [Crolles]
2 LEOM - Laboratoire d'électronique, optoélectronique et microsystèmes
3 LPN - Laboratoire de photonique et de nanostructures

Domaines: Science des matériaux [cond-mat.mtrl-sci]

C. Merckling, M. El-Kazzi, G. Delhaye, M. Gendry, Guillaume Saint-Girons, et al.. Pseudomorphic molecular beam epitaxy growth of γ-Al2O3(001) on Si(001) and evidence for spontaneous lattice reorientation during epitaxy. Applied Physics Letters, 2006, 89 (23), pp.232907. ⟨hal-01939908⟩