InAs/InP(001) quantum dots emitting at 1.55μm grown by low-pressure metalorganic vapor-phase epitaxy

A. Michon (1) , Guillaume Saint-Girons (1) , G. Beaudoin (1) , I. Sagnes (1) , L. Largeau (1) , G. Patriarche (1)

1 LPN - Laboratoire de photonique et de nanostructures

In this letter, we report on the structural and optical properties of self-assembled InAs quantum dots (QDs) directly grown on InP(001) by low-pressure metalorganic vapor-phase epitaxy. Transmission electron microscopy reveals defect-free diamond-shaped QDs with a density as high as 2.5×1010cm−2. The QD photoluminescence exhibits an intense peak centered around 1.58µm (785 meV) at room temperature. Changing the growth rate allows one to control the QD density, while maintaining an intense emission centered at this wavelength. These promising results open the way for the realization of efficient InAs/InP(001) QD-based devices, such as lasers or single-photon sources.

Domaines: Science des matériaux [cond-mat.mtrl-sci]

A. Michon, Guillaume Saint-Girons, G. Beaudoin, I. Sagnes, L. Largeau, et al.. InAs/InP(001) quantum dots emitting at 1.55μm grown by low-pressure metalorganic vapor-phase epitaxy. Applied Physics Letters, 2005, 87 (25), pp.253114. ⟨10.1063/1.2150271⟩. ⟨hal-01939897⟩