Direct growth of GaAs-based structures on exactly (001)-oriented Ge/Si virtual substrates: reduction of the structural defect density and observation of electroluminescence at room temperature under CW electrical injection - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Journal of Crystal Growth Année : 2004

Direct growth of GaAs-based structures on exactly (001)-oriented Ge/Si virtual substrates: reduction of the structural defect density and observation of electroluminescence at room temperature under CW electrical injection

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Science des matériaux [cond-mat.mtrl-sci]

Guillaume Saint-Girons  : Connectez-vous pour contacter le contributeur

https://hal.science/hal-01939879

Soumis le : jeudi 29 novembre 2018-19:05:23

Dernière modification le : vendredi 22 décembre 2023-11:37:07

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hal-01939879 , version 1 (29-11-2018)

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  • HAL Id : hal-01939879 , version 1

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Y. Chriqui, L. Largeau, G. Patriarche, G. Saint-Girons, S. Bouchoule, et al.. Direct growth of GaAs-based structures on exactly (001)-oriented Ge/Si virtual substrates: reduction of the structural defect density and observation of electroluminescence at room temperature under CW electrical injection. Journal of Crystal Growth, 2004, 265 (1-2), pp.53-59. ⟨hal-01939879⟩

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