Photoluminescence study of Mg-doped GaN and AlxGa1-xN (x<0.4) grown by molecular epitaxy

Julien Brault (1) , Mathieu Leroux (1) , Samuel Matta (1) , Mohamed Al Khalfioui (1) , Benjamin Damilano (1) , Herve Peyre (2, 3) , Sylvie Contreras (2, 3) , Sandrine Juillaguet (2, 3) , Bernard Gil (2, 4)

1 CRHEA - Centre de recherche sur l'hétéroepitaxie et ses applications
2 L2C - Laboratoire Charles Coulomb
3 SMC - Semi-conducteurs: Graphène, Grand gap & Photovoltaïque
4 PEPS - Physique de l'Exciton, du Photon et du Spin

Photoluminescence study of Mg-doped GaN and AlxGa1-xN (x<0.4) grown by molecular epitaxy

Domaines: Science des matériaux [cond-mat.mtrl-sci]

Julien Brault, Mathieu Leroux, Samuel Matta, Mohamed Al Khalfioui, Benjamin Damilano, et al.. Photoluminescence study of Mg-doped GaN and AlxGa1-xN (x<0.4) grown by molecular epitaxy. International Workshop on Nitride Semiconductor, Nov 2018, Kanazawa, Japan. ⟨hal-01937537⟩