Evidence of atomic-scale arsenic clustering in highly doped silicon

Abstract : Low temperature (675 °C) epitaxial in situ doped Si layers (As, 1.5 at. %) were analyzed by atom probe tomography (APT) to study clustering in a highly arsenic-doped silicon layer. The spatial distribution of As atoms in this layer was obtained by APT, and the distance distribution between first nearest neighbors between As atoms was studied. The result shows that the distribution of As atoms is nonhomogeneous, indicating clustering. Those clusters, homogeneously distributed in the volume, are found to be very small (a few atoms) with a high number density and contain more than 60% of the total number of As atoms. \textcopyright 2009 American Institute of Physics.
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S. Duguay, F. Vurpillot, T. Philippe, E. Cadel, R. Lardé, et al.. Evidence of atomic-scale arsenic clustering in highly doped silicon. Journal of Applied Physics, American Institute of Physics, 2009, 106 (10), pp.106102. ⟨10.1063/1.3257178⟩. ⟨hal-01929143⟩



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