Characterization of the Growth of an Oxidation Precursor at Low Temperature on Ofhc Copper

J. M. Machefert , M. Lenglet , D. Blavette (1) , A. Menand , A. D. Huysser

1 GPM - Groupe de physique des matériaux

The oxidation process of copper begins with the growth of a precursor CuxO having the same crystallographic structure as Cu2O but giving different XPS and UV spectra. The voltammogram of this oxide is different from that of bulk Cu2O and its oxygen concentration profile exhibits a diffuse zone 100 Å deep. For longer oxidation time the growth of non stoichiometric copper I oxide is shown by characteristic absorption bands on its UV-Vis-NIR spectrum. The voltammogram of this oxide is then quite the same as that of Cu2O. \textcopyright 1989, Elsevier Science & Technology.

Domaines: Physique [physics]

J. M. Machefert, M. Lenglet, D. Blavette, A. Menand, A. D. Huysser. Characterization of the Growth of an Oxidation Precursor at Low Temperature on Ofhc Copper. Studies in Surface Science and Catalysis, 1989, 48 (C), pp.625--632. ⟨10.1016/S0167-2991(08)60723-5⟩. ⟨hal-01928979⟩