Suzuki effect on \0 0 1\ stacking faults in boron-doped FeAl intermetallics

Emmanuel Cadel (1) , Anna Fraczkiewicz (2) , Didier Blavette (1)

1 GPM - Groupe de physique des matériaux
2 R3M - Département Rhéologie, Mécanismes, Microstructures et Matériaux Modèles

Three dimensional atom probe (3DAP) investigations of boron doped (400 ppm) FeAl40Ni3.8 samples aged at 400 °C for 1800 h, combined with electron microscopy observations, reveal that \001\ planar faults are boron enriched and aluminium depleted. The structure of such high energy defect is discussed and is thought to be stabilised by the segregation of boron. \textcopyright 2004 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

Mots clés: Atom probe; Boron; Defect; Iron-aluminium alloy; Segregation

Domaines: Physique [physics]

Emmanuel Cadel, Anna Fraczkiewicz, Didier Blavette. Suzuki effect on \0 0 1\ stacking faults in boron-doped FeAl intermetallics. Scripta Materialia, 2004, 51 (5), pp.437--441. ⟨10.1016/j.scriptamat.2004.04.026⟩. ⟨hal-01928909⟩