Snowplow effect and reactive diffusion in the Pt doped Ni-Si system

O. Cojocaru-Mirédin , Dominique Mangelinck (1) , K. Hoummada (2) , E. Cadel (3) , D. Blavette (3) , Bernard Deconihout (3) , C. Perrin-Pellegrino (1)

1 IM2NP - Institut des Matériaux, de Microélectronique et des Nanosciences de Provence
2 AMU - Aix Marseille Université
3 GPM - Groupe de physique des matériaux

The redistribution of Pt after heat treatment at 290 °C for 1 h has been analyzed by large-angle atom probe tomography assisted by femtosecond laser pulses. Two silicides Ni2Si and NiSi were found together with the solid solution of Ni and Pt. The redistribution of Pt at the Ni1-xPtx/Ni2Si interface is a clear illustration of the snowplow effect. A segregation of Pt at the Ni2Si/NiSi interface has been observed and is attributed to interfacial segregation. \textcopyright 2007 Acta Materialia Inc.

Mots clés: Atom-probe field-ion microscopy; Interface migration; Interface segregation; Thin films; Transition metal silicides

Domaines: Physique [physics]

O. Cojocaru-Mirédin, Dominique Mangelinck, K. Hoummada, E. Cadel, D. Blavette, et al.. Snowplow effect and reactive diffusion in the Pt doped Ni-Si system. Scripta Materialia, 2007, 57 (5), pp.373--376. ⟨10.1016/j.scriptamat.2007.05.007⟩. ⟨hal-01928888⟩