Atom-probe tomography study of boron precipitation in highly implanted silicon

Didier Blavette (1) , Huiyuan Wang (1) , Manon Bonvalet (1) , Florian Hüe (1) , Sébastien Duguay (1)

1 GPM - Groupe de physique des matériaux

Precipitation of boron in heavily doped silicon has been investigated using transmission electron microscopy (TEM) and atom-probe tomography (APT). Si wafers were implanted with a very high boron dose (1 × 1017 at. cm-2) at 27 keV and further annealed at 500, 750 and 1000 °C for 1 h. Results show that precipitates nucleate during implantation before any annealing has been made. They were found to have a smaller boron content than that of the expected phase SiB3. With increasing thermal budget, the concentration of boron approaches the equilibrium composition 75 at.%. It is thought that small boron-enriched precipitated clusters that form in supersaturated silicon should be distinguished from the boron interstitial clusters (BICs). \textcopyright 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Mots clés: atom probe tomography; boron; precipitation; silicon

Domaines: Physique [physics]

Didier Blavette, Huiyuan Wang, Manon Bonvalet, Florian Hüe, Sébastien Duguay. Atom-probe tomography study of boron precipitation in highly implanted silicon. physica status solidi (a), 2014, 211 (1), pp.126--130. ⟨10.1002/pssa.201300127⟩. ⟨hal-01928861⟩