Statistical nanoscale study of localised radiative transitions in GaN/AlGaN quantum wells and AlGaN epitaxial layers

Abstract : \textcopyright 2016 IOP Publishing Ltd. Compositional disorder has important consequences on the optical properties of III-nitride ternary alloys. In AlGaN epilayers and AlGaN-based quantum heterostructures, the potential fluctuations induced by such disorder lead to the localisation of carriers at low temperature, which affects their transition energies. Using the correlations between micro-photoluminescence, scanning transmission electron microscopy and atom probe tomography we have analysed the optical behaviour of Al 0.25 Ga 0.75 N epilayers and that of GaN/AlGaN quantum wells, and reconstructed in three dimensions the distribution of chemical species with sub-nanometre spatial resolution. These composition maps served as the basis for the effective mass calculation of electrons and holes involved in radiative transitions. Good statistical predictions were subsequently obtained for the above-mentioned transition and localisation energies by establishing a link with their microstructural properties.
Document type :
Journal articles
Complete list of metadatas

https://hal.archives-ouvertes.fr/hal-01928848
Contributor : Etienne Talbot <>
Submitted on : Tuesday, November 20, 2018 - 6:15:38 PM
Last modification on : Wednesday, May 29, 2019 - 10:56:05 AM

Identifiers

Citation

L. Rigutti, L. Mancini, W. Lefebvre, J. Houard, D. Hernàndez-Maldonado, et al.. Statistical nanoscale study of localised radiative transitions in GaN/AlGaN quantum wells and AlGaN epitaxial layers. Semiconductor Science and Technology, 2016, 31 (9), ⟨10.1088/0268-1242/31/9/095009⟩. ⟨hal-01928848⟩

Share

Metrics

Record views

22