THz detectors based on Si-CMOS technology field effect transistors–advantages, limitations and perspectives for THz imaging and spectroscopy

Jacek Marczewski , Dominique Coquillat (1) , Wojciech Knap (1) , C. Kolacinski , P. Kopyt , K. Kucharski , J. Lusakowski (2) , D. Obrebski , D. Tomaszewski , D. Yavorskiy , P. Zagrajek , R. Ryniec , N. Palka

1 L2C - Laboratoire Charles Coulomb
2 IFD - Institute of Experimental Physics [Warsaw]

Recent advances in THz detection with the use of CMOS technology have shown that this option has the potential to be a leading method of producing low-cost THz sensors with integrated readout systems. This review paper, based on authors’ years of experience, presents strengths and weaknesses of this solution. The article gives examples of some hints, regarding radiation coupling and readout systems. It shows that silicon CMOS technology is well adapted to the production of inexpensive imaging systems for sub-THz frequencies. As an example paper presents the demonstrator of a multipixel Si-CMOS THz spectroscopic system allowing for chemical identification of lactose. The THz detectors embedded in this system were manufactured using the CMOS process.

Domaines: Physique Générale [physics.gen-ph]

Jacek Marczewski, Dominique Coquillat, Wojciech Knap, C. Kolacinski, P. Kopyt, et al.. THz detectors based on Si-CMOS technology field effect transistors–advantages, limitations and perspectives for THz imaging and spectroscopy. Opto-Electronics Review, 2018, 26 (4), pp.261. ⟨10.1016/j.opelre.2018.08.002⟩. ⟨hal-01923646⟩