Direct imaging of boron segregation to extended defects in silicon

Sébastien Duguay (1) , Thomas Philippe (1) , Fuccio Cristiano (2) , D. Blavette (1)

1 GPM - Groupe de physique des matériaux
2 LAAS-MPN - Équipe Matériaux et Procédés pour la Nanoélectronique

Silicon was implanted with a high boron dose 5 10 15 at. cm −2 at 30 keV and further annealed at 950 ° C for 30 s. The sample was analyzed using transmission electron microscopy TEM and atom probe tomography APT. TEM images revealed the presence of a high density of dislocation loops 10 11 / cm −2 distributed around the projected range of implanted atoms. APT reconstructions showed local enrichment of boron in the form of loops that were interpreted as Cottrell atmosphere. Boron enriched rods, interpreted as the 113 defects, were also observed. Segregation energies of boron atoms to these defects were estimated to be 0.35 eV.

Domaines: Physique [physics]; Science des matériaux [cond-mat.mtrl-sci]; Sciences de l'ingénieur [physics]; Matériaux; Micro et nanotechnologies/Microélectronique

Sébastien Duguay, Thomas Philippe, Fuccio Cristiano, D. Blavette. Direct imaging of boron segregation to extended defects in silicon. Applied Physics Letters, 2010, 97 (24), pp.242104. ⟨10.1063/1.3526376⟩. ⟨hal-01922903⟩