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Article Dans Une Revue Journal of Applied Physics Année : 2010

Influence of boron-interstitials clusters on hole mobility degradation in high dose boron-implanted ultrashallow junctions

Résumé

Hole mobility degradation has been studied in high-dose boron-implanted ultrashallow junctions containing high concentrations of boron-interstitial clusters BICs, combining an empirical method based on the self-consistent interpretation of secondary-ion-mass spectrometry SIMS and Hall measurements and liquid-nitrogen LN 2 to room temperature RT hole mobility measurements. It has been found that BICs act as independent scattering centers which have a strong impact on hole mobility in addition to the other scattering mechanisms such as lattice and impurities scattering. A mobility degradation coefficient has been introduced, which gives information on the mobility degradation level in the analyzed junctions. In the case of very high concentrations of BICs containing a boron density up to 8 10 14 cm −2 , measured hole mobilities were found to be 40% lower than corresponding theoretical values. BICs dissolution through multiple Flash anneals at high temperature 1300 ° C reduces the observe mobility degradation.
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Dates et versions

hal-01922687 , version 1 (14-11-2018)

Identifiants

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Fabrice Severac, Fuccio Cristiano, Eléna Bedel-Pereira, Pier Francesco Fazzini, Jonathan Boucher, et al.. Influence of boron-interstitials clusters on hole mobility degradation in high dose boron-implanted ultrashallow junctions. Journal of Applied Physics, 2010, 107 (12), pp.123711. ⟨10.1063/1.3446844⟩. ⟨hal-01922687⟩
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