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Prospects for energy-efficient edge computing with integrated HfO 2-based ferroelectric devices

Abstract : Edge computing requires highly energy efficient microprocessor units with embedded non-volatile memories to process data at IoT sensor nodes. Ferroelectric non-volatile memory devices are fast, low power and high endurance, and could greatly enhance energy-efficiency and allow flexibility for finer grain logic and memory. This paper will describe the basics of ferroelectric devices for both hysteretic (non-volatile memory) and negative capacitance (steep slope switch) devices, and then project how these can be used in low-power logic cell architectures and fine-grain logic-in-memory (LiM) circuits.
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https://hal.archives-ouvertes.fr/hal-01916992
Contributor : O'Connor Ian <>
Submitted on : Wednesday, June 23, 2021 - 12:46:58 PM
Last modification on : Tuesday, August 10, 2021 - 11:02:01 AM

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Ian O'Connor, Mayeul Cantan, Cedric Marchand, Bertrand Vilquin, Bastien Giraud, et al.. Prospects for energy-efficient edge computing with integrated HfO 2-based ferroelectric devices. IFIP/IEEE International Conference on Very Large Scale Integration (VLSI-SOC), Oct 2018, Verona, Italy. ⟨10.1109/VLSI-SoC.2018.8644809⟩. ⟨hal-01916992⟩

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