Prospects for energy-efficient edge computing with integrated HfO 2-based ferroelectric devices

Ian O'Connor , Mayeul Cantan , Cedric Marchand (1) , Bertrand Vilquin (2) , Bastien Giraud (3) , Jean-Philippe Noel (3) , Stefan Slesazeck , Evelyn T Breyer , Halid Mulaosmanovic , Thomas Mikolajick , Adrian Marius Ionescu , Igor Stolichnov

1 LHC - Laboratoire Hubert Curien
2 INL - Institut des Nanotechnologies de Lyon
3 CEA-LETI - Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information

Edge computing requires highly energy efficient microprocessor units with embedded non-volatile memories to process data at IoT sensor nodes. Ferroelectric non-volatile memory devices are fast, low power and high endurance, and could greatly enhance energy-efficiency and allow flexibility for finer grain logic and memory. This paper will describe the basics of ferroelectric devices for both hysteretic (non-volatile memory) and negative capacitance (steep slope switch) devices, and then project how these can be used in low-power logic cell architectures and fine-grain logic-in-memory (LiM) circuits.

Mots clés: ferroelectric devices; non-volatile memory; steep slope switch; low-power logic; logic-in-memory

Domaines: Micro et nanotechnologies/Microélectronique

Ian O'Connor, Mayeul Cantan, Cedric Marchand, Bertrand Vilquin, Bastien Giraud, et al.. Prospects for energy-efficient edge computing with integrated HfO 2-based ferroelectric devices. IFIP/IEEE International Conference on Very Large Scale Integration (VLSI-SOC), Oct 2018, Verona, Italy. ⟨10.1109/VLSI-SoC.2018.8644809⟩. ⟨hal-01916992⟩