Characterization of Dynamic Self-Heating in GaN HEMTs Using Gate Resistance Measurement

Adrien Cutivet (1, 2, 3) , Flavien Cozette (2, 3) , Meriem Bouchilaoun (2, 3) , Ahmed Chakroun (2, 3) , Osvaldo Arenas , Marie Lesecq (1, 4) , Jean-Claude de Jaeger (1) , Abdelatif Jaouad (2, 3) , François Boone (2, 3) , Hassan Maher (5, 2, 3)

1 IEMN - Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520
2 LN2 - Laboratoire Nanotechnologies Nanosystèmes
3 3IT - Institut Interdisciplinaire d'Innovation Technologique [Sherbrooke]
4 PUISSANCE - IEMN - Puissance - IEMN
5 OMMIC

This paper reports on a new method for the characterization of transistors transient self-heating based on gate end-to-end resistance measurement. An alternative power signal is injected to the device output (between drain and source) at constant gate-to-source voltage. The dependence of gate resistance with temperature is used to extract the thermal impedance of the device in frequency domain via electrical measurement. This new method is validated on common-gate AlGaN/GaN high-electron-mobility transistors on Si substrate under different experimental conditions, which demonstrates its potential to provide complete dynamic self-heating models for power transistors.

Mots clés: GaN; temperature measurement; dynamic self-heating; gate metal thermometry; HEMT

Domaines: Sciences de l'ingénieur [physics]

Adrien Cutivet, Flavien Cozette, Meriem Bouchilaoun, Ahmed Chakroun, Osvaldo Arenas, et al.. Characterization of Dynamic Self-Heating in GaN HEMTs Using Gate Resistance Measurement. IEEE Electron Device Letters, 2017, 38 (2), pp.240 - 243. ⟨10.1109/LED.2016.2641740⟩. ⟨hal-01914376⟩