Characterization, modeling and comparison of 1/f noise in Si/SiGe:C HBTs issued from three advanced BiCMOS technologies

M. Seif (1) , F. Pascal (1, 2) , B. Sagnes (1, 2) , J. Elbeyrouthy (1) , A. Hoffmann (1, 2) , S. Haendler (3) , P. Chevalier (3) , D. Gloria (3)

1 IES - Institut d’Electronique et des Systèmes
2 M@CSEE - Micro électronique, Composants, Systèmes, Efficacité Energétique
3 ST-CROLLES - STMicroelectronics [Crolles]

Domaines: Electronique

M. Seif, F. Pascal, B. Sagnes, J. Elbeyrouthy, A. Hoffmann, et al.. Characterization, modeling and comparison of 1/f noise in Si/SiGe:C HBTs issued from three advanced BiCMOS technologies. International Conference on Microelectronics (ICM), 2017, Beyrouth, Lebanon. ⟨hal-01907729⟩