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Electro-thermal model of an integrated buck converter

Abstract : This study deals with new integrated systems for power electronic applications including wide-band gap semiconductors. The integration of Silicon carbide (SiC) components provides new perspectives such as higher temperature operating points than conventional Silicon (Si) semiconductors. The present work intends to study the electro-thermal behaviour of an integrated buck converter composed of a Silicon IGBT (Insulated-Gate Bipolar Transistor) and a Silicon carbide diode. An analysis of local heat sources due to Joule effect and compact thermal model of the assembly are proposed to predict local temperature of power electronic components.
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Submitted on : Thursday, October 25, 2018 - 5:32:53 PM
Last modification on : Tuesday, November 6, 2018 - 1:04:16 AM
Long-term archiving on: : Saturday, January 26, 2019 - 3:47:14 PM


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  • HAL Id : hal-01905431, version 1
  • OATAO : 19990



Baptiste Trajin, Paul-Etienne Vidal, Julien Viven. Electro-thermal model of an integrated buck converter. 17th European Conference on Power Electronics and Applications (EPE), Sep 2015, Genève, Switzerland. pp.0. ⟨hal-01905431⟩



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