A new method for test chip and single 40nm NOR Flash cell electrical parameters correlation using a CAST structure

T. Kempf (1, 2, 3) , V. Della Marca (2) , P. Canet (2) , A. Regnier (1) , P. Masson (3) , Jean-Michel Portal (2)

1 ST-ROUSSET - STMicroelectronics [Rousset]
2 IM2NP - Institut des Matériaux, de Microélectronique et des Nanosciences de Provence
3 Polytech'Lab - Laboratoire de Polytech Nice-Sophia

Domaines: Micro et nanotechnologies/Microélectronique

T. Kempf, V. Della Marca, P. Canet, A. Regnier, P. Masson, et al.. A new method for test chip and single 40nm NOR Flash cell electrical parameters correlation using a CAST structure. 2018 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA), Apr 2018, Hsinchu, Taiwan. ⟨10.1109/VLSI-TSA.2018.8403859⟩. ⟨hal-01900783⟩