Many-body effects in the electronic structure of Sn/Si(111)-α-√ 3

Anne Charrier (1) , R Pérez , F. Thibaudau (2) , J-M Debever , J. Ortega (3) , F. Flores (4) , J-M Themlin

1 CINaM - Centre Interdisciplinaire de Nanoscience de Marseille
2 CRMCN - Centre de recherche de la matière condensée et des nanosciences
3 PNNL - Pacific Northwest National Laboratory
4 FMC - Departamento de Fisica de la Materia Condensada [Madrid]

The unoccupied electronic structure of the model interface Sn/Si(111)-α-√ 3 has been measured at room temperature (RT) using angle-resolved inverse photoemission spectroscopy (KRIPES). In addition to a partly occupied surface band crossing the Fermi level, there is a second unoccupied surface state located 1.5 eV above E F ; the existence of these two surface states is not compatible with the single adatom site used to describe the α-√ 3 reconstruction. These surface states receive a natural explanation, once many-body effects are introduced, in the framework of a dynamical fluctuations model, where two types of adatom site, reminiscent of a possible low-temperature (3 × 3) phase, coexist at RT.

Domaines: Science des matériaux [cond-mat.mtrl-sci]; Matière Molle [cond-mat.soft]

Anne Charrier, R Pérez, F. Thibaudau, J-M Debever, J. Ortega, et al.. Many-body effects in the electronic structure of Sn/Si(111)-α-√ 3. Journal of Physics: Condensed Matter, 2001. ⟨hal-01900000⟩