Modification of Silicon Films and Nanostructures Deposition by Electric Field During UV Laser Ablation
Résumé
We present the experimental results on laser ablation and deposition of
crystalline silicon. We show that using of ArF excimer laser (photon energy 6.4
eV) leads to high production rate of non-thermal and thermal ionized species.
Non-thermal component corresponding to the UV light induced desorption was
observed at fluence well below melting threshold. The origin of this one is
discussed in the frame of the Coulomb explosion model.
From time of flight spectra of slow thermal and rapid non-thermal silicon ions
and target charge measurement we demonstrate the possibility to manipulate the
time and space distribution of ablated particles by applying DC or pulsed
electric fields during plume expansion.
Analysis of films properties reveals strong influence of modified plume
expansion dynamics on the Si film growth and on the condensation-deposition
of Si nanocluster film under inert gas atmosphere.