Epitaxial La0.7Sr0.3MnO3 thin films on silicon with excellent magnetic and electric properties by combining physical and chemical methods

José Manuel Vila-Fungueiriño (1, 2) , Jaume Gázquez , Cesar Magen (3) , Guillaume Saint-Girons (4) , Romain Bachelet (4) , Adrián Carretero-Genevrier (2, 1)

1 IES - Institut d’Electronique et des Systèmes
2 M2A - Matériaux, MicroCapteurs et Acoustique
3 ARAID - Fundación Agencia Aragonesa para la Investigación y el Desarrollo
4 INL - H&N - INL - Hétéroepitaxie et Nanostructures

Half-metallic ferromagnetic La0.7Sr0.3MnO3 (LSMO) represents an appealing candidate to be integrated on silicon substrates for technological devices such as sensors, data storage media, IR detectors, and so on. Here, we report high-quality epitaxial LSMO thin films obtained by an original combination of chemical solution deposition (CSD) and molecular beam epitaxy (MBE). A detailed study of the thermal, chemical, and physical compatibility between SrTiO3 (STO)/Si buffer layers and LSMO films, grown by MBE and CSD, respectively, enables a perfect integration of both materials. Importantly, we show a precise control of the coercive field of LSMO films by tuning the mosaicity of the STO/Si buffer layer. These results demonstrate the enormous potential of combining physical and chemical processes for the development of low-cost functional oxide-based devices compatible with the complementary metal oxide semiconductor technology.

Mots clés: Thin-films; functional oxides; silicon integration; chemical solution deposition; molecular beam epitaxy

Domaines: Matériaux

José Manuel Vila-Fungueiriño, Jaume Gázquez, Cesar Magen, Guillaume Saint-Girons, Romain Bachelet, et al.. Epitaxial La0.7Sr0.3MnO3 thin films on silicon with excellent magnetic and electric properties by combining physical and chemical methods. Science and Technology of Advanced Materials, 2018, 19 (1), pp.702 - 710. ⟨10.1080/14686996.2018.1520590⟩. ⟨hal-01896867⟩