Packaging with double-side cooling capability for SiC devices, based on silver sintering

Cyril Buttay (1) , Raphaël Riva (1) , Bruno Allard (1) , Marie-Laure Locatelli (2) , Vincent Bley (2)

1 EE - Ampère, Département Energie Electrique
2 LAPLACE-MDCE - Matériaux Diélectriques dans la Conversion d’Energie

Although they can operate at high temperature, SiC devices require efficient thermal management. One solution is to use a dual-side cooling packaging, where heat can be extracted through two surfaces. Here, such a package is presented, using only materials which can operate at high temperature (>200°C): ceramic substrates, silver sintering, fluorinated parylene. Due to the small feature size of the SiC dies used, a special care is given on the etching resolution of the substrates. The complete manufacturing process is presented, and some characterization results are given to demonstrate that the package is operational.

Domaines: Energie électrique

Cyril Buttay, Raphaël Riva, Bruno Allard, Marie-Laure Locatelli, Vincent Bley. Packaging with double-side cooling capability for SiC devices, based on silver sintering. 44th IEEE IECON, IEEE, Oct 2018, Washington DC, United States. ⟨10.1109/IECON.2018.8591117⟩. ⟨hal-01895805⟩