Second Harmonic Generation characterization of SOI wafers: Impact of layer thickness and interface electric field

D. Damianos (1) , G. Vitrant (1) , M. Lei , J. Changala , A. Kaminski-Cachopo (1) , D. Blanc-Pélissier (2) , S. Cristoloveanu (1) , I. Ionica (1)

1 IMEP-LAHC - Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation
2 INL - PV - INL - Photovoltaïque

In this work, we investigate Second Harmonic Generation (SHG) as a non-destructive characterization method for Silicon-On-Insulator (SOI) materials. For thick SOI stacks, the SHG signal is related to the thickness variations of the different layers. However, in thin SOI films, the comparison between measurements and optical modeling suggests a supplementary SHG contribution attributed to the electric fields at the SiO2/Si interfaces. The impact of the electric field at each interface of the SOI on the SHG is assessed. The SHG technique can be used to evaluate interfacial electric fields and consequently interface charge density in SOI materials.

Mots clés: Second Harmonic Generation; multilayers; SOI; nonlinear optics modeling

Domaines: Matériaux

D. Damianos, G. Vitrant, M. Lei, J. Changala, A. Kaminski-Cachopo, et al.. Second Harmonic Generation characterization of SOI wafers: Impact of layer thickness and interface electric field. Solid-State Electronics, 2018, 143, pp.90 - 96. ⟨10.1016/j.sse.2017.12.006⟩. ⟨hal-01893421⟩