Incomplete Ionization and Carrier Mobility in Compensated p -Type and n-Type Silicon

Abstract : In this paper, we show through both calculations and Hall effect measurements that incomplete ionization of dopants has a greater influence on the majority-carrier density in p-type and n-type compensated Si than in uncompensated Si with the same net doping. The factors influencing incomplete ionization at room-temperature are shown to be the majority-dopant concentration, its ionization energy and type and the compensation level. We show that both the majority-and the minority-carrier mobilities are lower in compensated Si than expected by Klaassen's model and that the discrepancy increases with the compensation level at room-T. The study of the T-dependence of the majority-carrier mobility shows that there is no compensation-specific mechanism and that the reduction of the screening in compensated Si cannot explain alone the observed gap between experimental and theoretical mobility.
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M. Forster, Fiacre Rougieux, A. Cuevas, B. Dehestru, A. Thomas, et al.. Incomplete Ionization and Carrier Mobility in Compensated p -Type and n-Type Silicon. IEEE Journal of Photovoltaics, IEEE, 2013, 3 (1), pp.108 - 113. ⟨10.1109/JPHOTOV.2012.2210032⟩. ⟨hal-01890802⟩

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