Boron-oxygen defect in Czochralski-silicon co-doped with gallium and boron

Maxime Forster (1, 2) , Erwann Fourmond , Fiacre E. Rougieux (3) , Andres Cuevas (3) , R. Gotoh (4) , Kozo Fujiwa (5) , Satoshi Uda (6) , Mustapha Lemiti (2)

1 Apollon Solar - Apollon Solar
2 INL - PV - INL - Photovoltaïque
3 ANU - Australian National University - Department of engineering
4 Institute for Materials Research
5 Institute for Materials Research
6 IMR - Institute for Materials research

Characterization of deep levels in n-type and semi-insulating 4H-SiC epitaxial layers by thermally stimulated current spectroscopy J. Appl. Phys. 111, 014910 (2012) Monte Carlo analysis of electron relaxation process and transport property of wurtzite InN

Domaines: Science des matériaux [cond-mat.mtrl-sci]; Micro et nanotechnologies/Microélectronique

Maxime Forster, Erwann Fourmond, Fiacre E. Rougieux, Andres Cuevas, R. Gotoh, et al.. Boron-oxygen defect in Czochralski-silicon co-doped with gallium and boron. Applied Physics Letters, 2012, 100 (4), ⟨10.1063/1.3680205⟩. ⟨hal-01890459⟩