Diamond Schottky barrier diodes for power electronics applications

Abstract : This paper presents the integration of diamond Schotkky barrier diodes (SBDs) for power electronics applications and the problematics linked to their implementation in power converters. Various approches are considered for increasing the current rating of the power device. In particular, the parallelization and the interleaving of pseudo-vertical diamond SBDs are investigated. This study allows to evidence interactions between diodes from the same die which can result in unbalanced current distribution between diodes with differences in electrical performances. Modifications of the device structure are proposed in order to overcome this issue for improving the implementation of future diamond devices in power electronics applications. Index Terms—Schottky diodes, monocrystalline diamond, parallelization, monolithic integration
Type de document :
Communication dans un congrès
ECCE 2018, Sep 2018, Portland, United States
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https://hal.archives-ouvertes.fr/hal-01885530
Contributeur : Sylvie Garcia <>
Soumis le : mardi 2 octobre 2018 - 09:00:36
Dernière modification le : mercredi 13 février 2019 - 10:06:06

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  • HAL Id : hal-01885530, version 1

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Gaëtan Perez, Juliette Letellier, Aurélien Maréchal, David Eon, Gauthier Chicot, et al.. Diamond Schottky barrier diodes for power electronics applications. ECCE 2018, Sep 2018, Portland, United States. 〈hal-01885530〉

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