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Diamond Schottky barrier diodes for power electronics applications

Abstract : This paper presents the integration of diamond Schotkky barrier diodes (SBDs) for power electronics applications and the problematics linked to their implementation in power converters. Various approches are considered for increasing the current rating of the power device. In particular, the parallelization and the interleaving of pseudo-vertical diamond SBDs are investigated. This study allows to evidence interactions between diodes from the same die which can result in unbalanced current distribution between diodes with differences in electrical performances. Modifications of the device structure are proposed in order to overcome this issue for improving the implementation of future diamond devices in power electronics applications. Index Terms—Schottky diodes, monocrystalline diamond, parallelization, monolithic integration
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https://hal.archives-ouvertes.fr/hal-01885530
Contributor : Sylvie Garcia <>
Submitted on : Tuesday, October 2, 2018 - 9:00:36 AM
Last modification on : Monday, March 30, 2020 - 2:02:03 PM

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  • HAL Id : hal-01885530, version 1

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Gaëtan Perez, Juliette Letellier, Aurélien Maréchal, David Eon, Gauthier Chicot, et al.. Diamond Schottky barrier diodes for power electronics applications. ECCE 2018, Sep 2018, Portland, United States. ⟨hal-01885530⟩

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