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Comprehensive description of the electro-optic effects in strained silicon waveguides

Abstract : We present a novel and comprehensive analysis method that considers both plasma-dispersion effect and the strain-induced Pockels effect to faithfully describe the electro-optic effects taking place in a strained silicon waveguide under an applied voltage. The change of carrier distribution arising from the application of a voltage, leads to a redistribution of the electrostatic field which deeply affects the strain-induced Pockels effect. By simulating the strain gradients distribution inside the waveguide together with the free carrier concentration in silicon, we were able to describe that the effective index change due to Pockels effect in strained silicon waveguides and the applied voltage have a nonlinear relationship.
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Submitted on : Friday, September 21, 2018 - 3:17:52 PM
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Pedro Damas, Mathias Berciano, Guillaume Marcaud, Carlos Alonso Ramos, Delphine Marris-Morini, et al.. Comprehensive description of the electro-optic effects in strained silicon waveguides. Journal of Applied Physics, American Institute of Physics, 2017, 122 (15), ⟨10.1063/1.4985836⟩. ⟨hal-01878844⟩



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