Flexible Photodiodes Based on Nitride Core/Shell p–n Junction Nanowires

Abstract : A flexible nitride p-n photodiode is demonstrated. The device consists of a composite nanowire/polymer membrane transferred onto a flexible substrate. The active element for light sensing is a vertical array of core/shell p–n junction nanowires containing InGaN/GaN quantum wells grown by MOVPE. Electron/hole generation and transport in core/shell nanowires are modeled within nonequilibrium Green function formalism showing a good agreement with experimental results. Fully flexible transparent contacts based on a silver nanowire network are used for device fabrication, which allows bending the detector to a few millimeter curvature radius without damage. The detector shows a photoresponse at wavelengths shorter than 430 nm with a peak responsivity of 0.096 A/W at 370 nm under zero bias. The operation speed for a 0.3 × 0.3 cm2 detector patch was tested between 4 Hz and 2 kHz. The −3 dB cutoff was found to be ∼35 Hz, which is faster than the operation speed for typical photoconductive detectors and which is compatible with UV monitoring applications.
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Submitted on : Wednesday, September 19, 2018 - 7:20:59 AM
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Nan Zhang, Nan Dai, Nan Guan, Agnes Messanvi, Vladimir Neplokh, et al.. Flexible Photodiodes Based on Nitride Core/Shell p–n Junction Nanowires. ACS Applied Materials & Interfaces, Washington, D.C. : American Chemical Society, 2016, 8 (39), pp.26198 - 26206. ⟨10.1021/acsami.6b06414⟩. ⟨hal-01876891⟩

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