On-Wafer Series-Through Broadband Measurement of Sub-fF55-nm MOS RF Voltage-Tunable Capacitors

Abstract : The objective of this letter oriented towards microwave measurement of high impedance devices using a conventional on-wafer probe station is multiple. First, we provided a quantification of the measurement uncertainty inherent to the setup when measuring capacitors in the range 0.01-10 fF using both reflection and transmission methods up to 50 GHz. In particular, we demonstrate a clear improvement when using transmission method in series-through configuration. As a practical demonstration, on-wafer MOS voltage-tunable capacitors with capacitances ranging from 0.85 to 1.15 fF are extracted with uncertainties of 130 and 2 aF respectively for both reflection and transmission measurements at 10 GHz. Capacitance fluctuation related to the technological process in the order of 20 aF is then exemplary demonstrated using the series-through configuration. Index Terms-sub-fF MOS varactor, measurement accuracy, on-wafer calibration, vector network analyzer (VNA), two-port measurement, coplanar waveguide (CPW).
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Submitted on : Wednesday, September 12, 2018 - 6:06:31 PM
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K. Daffe, G. Dambrine, C. Durand, C. Gaquiere, K. Haddadi. On-Wafer Series-Through Broadband Measurement of Sub-fF55-nm MOS RF Voltage-Tunable Capacitors. IEEE Microwave and Wireless Components Letters, Institute of Electrical and Electronics Engineers, 2018, 28 (9), pp.831 - 833. ⟨10.1109/LMWC.2018.2851386⟩. ⟨hal-01873048⟩

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