Retrapping Current in Bridge-Type Nano-SQUIDs
Résumé
It is a challenge to fabricate bridge-type nano-superconducting quantum interference devices (bridge-type nano-SQUIDs) that operate without hysteresis over a broad temperature range. Hysteresis—defined by the difference between switching and retrapping current—is one of the foremost constraints to operating nano-SQUIDs with low noise. The quantum behavior of the switching current has been explored in bridge-type nano-SQUIDs, but studies exploring the parameters ruling the retrapping current are rare. Here, we study the temperature and magnetic-field dependence of the retrapping current in two different kinds of bridge-type nano-SQUID: trilayer aluminum-niobium-tungsten bridge-type nano-SQUIDs and suspended-bridge nano-SQUIDs. Our study confirms previous works showing that the retrapping current decreases as the bath temperature increases and is insensitive to the magnetic field. Using a thermal model originally proposed by Skocpol, Beasley, and Tinkham [J. Appl. Phys. 45, 4054 (1974)], we account for, and suggest a simple formula which describes, the temperature dependence of the retrapping current. Our calculations show that the magnitude of the retrapping current is mainly dependent on the superconducting transition temperature and the effective resistance of the weak link and that the temperature dependence of the retrapping current is ruled by the temperature dependence of the thermal conductivity in the normal and superconducting state. Finally, we apply our calculation to newly fabricated shunted bridge-type nano-SQUIDs, which show nonhysteretic current-voltage characteristics down to at least 250 mK and display systematic voltage modulations as a function of externally applied magnetic fields.