Comprehensive Phase-Change Memory Compact Model for Circuit Simulation

Corentin Pigot (1, 2, 3) , Marc Bocquet (2) , Fabien Gilibert (1) , Marina Reyboz (3) , Olga Cueto (3) , V. Della Marca , Paola Zuliani (4) , Jean-Michel Portal

1 ST-CROLLES - STMicroelectronics [Crolles]
2 IM2NP - Institut des Matériaux, de Microélectronique et des Nanosciences de Provence
3 CEA-LETI - Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information
4 ST-AGRATE - STMicroelectronics [Agrate Brianza]

In this paper, a new continuous multilevel compact model for phase-change memory (PCM) is proposed. It is based on modified rate equations with the introduction of a variable related to GST melting. The model is evaluated using a large set of dynamic measurements and shows a good accuracy with a single model card. All fitting parameters are discussed and their impacts are detailed. Full circuit simulation is performed. Good convergence and fast simulation time suggest that this new compact model can be exploited for PCM circuit design.

Mots clés: Compact modeling; Integrated circuit modeling; Phase-change memory; PCM; PCRAM

Domaines: Micro et nanotechnologies/Microélectronique

Corentin Pigot, Marc Bocquet, Fabien Gilibert, Marina Reyboz, Olga Cueto, et al.. Comprehensive Phase-Change Memory Compact Model for Circuit Simulation. IEEE Transactions on Electron Devices, 2018, pp.1 - 8. ⟨10.1109/TED.2018.2862155⟩. ⟨hal-01869957⟩