Rutile-structured TiO₂ deposited by plasma enhanced atomic layer deposition using Tetrakis(dimethylamino)titanium precursor on in-situ oxidized Ru electrode

John Pointet (1) , Patrick Gonon (1) , Laurence Latu-Romain (1) , Ahmad Bsiesy (1) , Corentin Vallée (1)

1 LTM - Laboratoire des technologies de la microélectronique

In this work, tetrakis(dimethylamino)titanium precursor as well as in-situ oxidized ruthenium bottom electrode were used to grow rutile-structured titanium dioxide thin layers by plasma enhanced atomic layer deposition. Metal–insulator–metal capacitors have been elaborated in order to study the electrical properties of the device. It is shown that this process leads to devices exhibiting excellent results in terms of dielectric constant and leakage current.

Domaines: Science des matériaux [cond-mat.mtrl-sci]; Micro et nanotechnologies/Microélectronique

John Pointet, Patrick Gonon, Laurence Latu-Romain, Ahmad Bsiesy, Corentin Vallée. Rutile-structured TiO₂ deposited by plasma enhanced atomic layer deposition using Tetrakis(dimethylamino)titanium precursor on in-situ oxidized Ru electrode. Journal of Vacuum Science & Technology A, 2014, A 32, pp.01A120. ⟨10.1116/1.4843515⟩. ⟨hal-01798345⟩