Scanning tunneling microscopy investigation of GaP epitaxial growth on nominal and vicinal Si(001) substrates for optoelectronic applications

Simon Charbonnier (1) , Ida Lucci (2) , Subhashis Gangopadhyay (3) , Yanping Wang (2) , Tony Rohel (2) , Rozenn Bernard (2) , Guillaume Raffy (1) , Antoine Létoublon (2) , C. Cornet (2) , Pascal Turban (1)

1 IPR - Institut de Physique de Rennes
2 FOTON - Institut des Fonctions Optiques pour les Technologies de l'informatiON
3 BITS Pilani - Birla Institute of Technology and Science

Domaines: Physique [physics]; Matière Condensée [cond-mat]; Science des matériaux [cond-mat.mtrl-sci]

Simon Charbonnier, Ida Lucci, Subhashis Gangopadhyay, Yanping Wang, Tony Rohel, et al.. Scanning tunneling microscopy investigation of GaP epitaxial growth on nominal and vicinal Si(001) substrates for optoelectronic applications . European Materials Research Society - Spring Meeting 2018 (E-MRS 2018 Spring Meeting), Jun 2018, Strasbourg, France. 2018. ⟨hal-01866135⟩