Ultra-Fast and High-Reliability SOT-MRAM: From Cache Replacement to Normally-Off Computing

Abstract : This paper deals with a new MRAM technology whose writing scheme relies on the Spin Orbit Torque (SOT). Compared to Spin Transfer Torque (STT) MRAM, it offers a very fast switching, a quasi-infinite endurance and improves the reliability by solving the issue of “read disturb”, thanks to separate reading and writing paths. These properties allow introducing SOT at all-levels of the memory hierarchy of systems and adressing applications which could not be easily implemented by STT-MRAM. We present this emerging technology and a full design framework, allowing to design and simulate hybrid CMOS/SOT complex circuits at any level of abstraction, from device to system. The results obtained are very promising and show that this technology leads to a reduced power consumption of circuits without notable penalty in terms of performance.
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https://hal.archives-ouvertes.fr/hal-01864485
Contributor : Guillaume Prenat <>
Submitted on : Thursday, August 30, 2018 - 9:06:35 AM
Last modification on : Thursday, April 4, 2019 - 9:44:02 AM

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Guillaune Prenat, Kotb Jabeur, Pierre Vanhauwaert, Gregory Di Pendina, Fabian Oboril, et al.. Ultra-Fast and High-Reliability SOT-MRAM: From Cache Replacement to Normally-Off Computing. IEEE Transactions on Multi-Scale Computing Systems, IEEE, 2016, 2 (1), pp.49 - 60. ⟨10.1109/TMSCS.2015.2509963⟩. ⟨hal-01864485⟩

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