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, AHE (i pulse ) at different cryostat temperatures. Cycles for x=0.78 (Co-rich at room temperature). b) The critical current to reverse M increases linearly when T decrease and saturate for T< 50 K. The extrapolation of the linear behavior at higher temperature for zero current is defined as T*

, S5-H x -I switching phase diagram in the W/Co x Tb 1-x

S. Figure, S7) presents a 2D plot summarizing the current?switching cycles performed under different external in-plane field H x (phase diagram) at room temperature for a channel width of w=, p.20

. ?m, Figure S6 are the results obtained for Si-SiO 286 Tb 14 (3.5 nm) /AlOx(3 nm) and fig. S7 for Si-SiO 2, AlOx

S. Figure, 2D-plot of current?switching cycles performed at room temperature on Si

, AlOx(3 nm) for a channel width of w = 20 ?m. The R(i pulse , H x ) cycles were carried out with different applied in plane field between ?3 kG and +3 kG. The red (blue) color region stand for Up (Down) magnetic configuration according the schematic Hall bar shown in Fig

S. Figure, 2D-plot of current?switching cycles performed at room temperature on Si

, AlOx(3 nm) for a channel width of w = 10 ?m. The R(i pulse , H x ) cycles were carried out with different applied in plane field between ?6.5 kG and +6.5 kG. The red (blue) color region stand for Up (Down) magnetic configuration according the schematic Hall bar shown in Fig