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Article Dans Une Revue Applied Physics Letters Année : 2018

Van der Waals epitaxy of two-dimensional single-layer h-BN on graphite by molecular beam epitaxy: Electronic properties and band structure

Deborah Pierucci
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François Bertran
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Bernard Gil
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Alex Summerfeld
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Peter Beton
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Sergei Novikov
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Julien Rault

Résumé

We report on the controlled growth of h-BN/graphite by means of molecular beam epitaxy. X-Ray photoelectron spectroscopy suggests the presence of an interface without any reaction or intermixing, while the angle resolved photoemission spectroscopy (ARPES) measurements show that the h-BN layers are epitaxially aligned with graphite. A well-defined band structure is revealed by ARPES measurements, reflecting the high quality of the h-BN films. The measured valence band maximum located at 2.8 eV below the Fermi level reveals the presence of undoped h-BN films (band gap similar to 6 eV). These results demonstrate that, although only weak van der Waals interactions are present between h-BN and graphite, a long range ordering of h-BN can be obtained even on polycrystalline graphite via van der Waals epitaxy, offering the prospect of large area, single layer h-BN

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hal-01863526 , version 1 (03-06-2021)

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Deborah Pierucci, Jihene Zribi, Hugo Henck, Julien Chaste, Mathieu G. Silly, et al.. Van der Waals epitaxy of two-dimensional single-layer h-BN on graphite by molecular beam epitaxy: Electronic properties and band structure. Applied Physics Letters, 2018, 112 (25), pp.253102. ⟨10.1063/1.5029220⟩. ⟨hal-01863526⟩
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