Surge Driven Evolution of Schottky Barrier Height on 4H-SiC JBS Diodes

Besar Asllani (1, 2) , Jean Baptiste Fonder (3) , Pascal Bevilacqua (1, 2) , Dominique Planson (1, 2) , Luong Viet Phung (1, 2) , Pierre Brosselard (3)

1 EE - Ampère, Département Energie Electrique
2 INSA Lyon - Institut National des Sciences Appliquées de Lyon
3 CALY Technologies

In this paper we will present the results of repetitive surge stress carried out on six 3.3 kV-5A Ti/Ni 4H-SiC JBS diodes. Repetitive current peaks between 10 A and 24 A have been applied and some diodes were able to endure 100,000 cycles while others failed before. The causes of failure have not been determined but a correlation between peak surge current and physical parameters evolution rate has been proven. Simulations show that contact temperature during surge can reach 300 °C, which is very close to Schottky contact annealing temperatures.

Mots clés: Surge Cycling; Schottky barrier; JBS; Contact annealing; Barrier heigh evolution; 4H-SiC

Domaines: Electronique; Energie électrique

Besar Asllani, Jean Baptiste Fonder, Pascal Bevilacqua, Dominique Planson, Luong Viet Phung, et al.. Surge Driven Evolution of Schottky Barrier Height on 4H-SiC JBS Diodes. Materials Science Forum, 2018, 924, pp.593 - 596. ⟨10.4028/www.scientific.net/MSF.924.593⟩. ⟨hal-01857352⟩