Study and Optimization of a 600V Pseudo-Vertical GaN-on-Silicon Rectifier by Finite Element Simulations

Amira Souguir-Aouani (1, 2) , Nicolas Thierry-Jebali (1, 2) , Dominique Tournier (1, 2) , Arnaud Yvon (3) , Emmanuel Collard (3) , Dominique Planson (1, 2)

1 EE - Ampère, Département Energie Electrique
2 INSA Lyon - Institut National des Sciences Appliquées de Lyon
3 ST-TOURS - STMicroelectronics [Tours]

This work presents the impact analysis of physical and geometrical parameters on the on-resistance and the breakdown voltage in order to optimize a 600 V pseudo-vertical GaN/Si Schottky rectifier. The results by finite element simulations indicate that the most influent parameter on the resistance is the thickness of the n+ layer. Regarding reverse specifications, simulations show that a good efficiency of the “Mesa + Guard Ring” is achieved for a guard ring doping concentration higher than Na=5×1017 cm-3.

Mots clés: Rectifiers; Gallium Nitride - GaN; GaN rectifier; Finite Element Simulation; GaN on Silicon

Domaines: Energie électrique

Amira Souguir-Aouani, Nicolas Thierry-Jebali, Dominique Tournier, Arnaud Yvon, Emmanuel Collard, et al.. Study and Optimization of a 600V Pseudo-Vertical GaN-on-Silicon Rectifier by Finite Element Simulations. Materials Science Forum, 2016, 858, pp.1190 - 1193. ⟨10.4028/www.scientific.net/MSF.858.1190⟩. ⟨hal-01857348⟩