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Intrinsic Frequency Response of Silicon–Germanium Phototransistor Associated With 850-nm Multimode Fiber

Abstract : —Theintrinsic frequency response of Silicon-Germanium Heterojunction bipolar Photo-Transistors (HPT) at 850nm is studied to be implemented in multimode fiber systems. The experimental analysis of an HPT with an optical window size of 10x10µm 2 is presented. An Opto-Microwave Scanning Near-Field Optical Microscopy (OM-SNOM) is performed to observe the variation of the HPT dynamic behavior versus the illumination location of the phototransistor. The photocurrent generated by the photodiode at the interface between the n++ sub-collector and the p+ guard ring is analyzed and its impact on the performance of the HPT is investigated. Then, we propose a technique to remove the substrate photocurrent effect on the optical transition frequency (f Topt): the f Topt value of 4.1GHz given by raw measurement results increases up to 6GHz after removing the substrate response. The influence of the two-dimensional carrier flows on the HPT intrinsic Opto-Microwave (OM) behavior is also studied. Design aspects of SiGe/Si HPT structures are finally discussed as a conclusion.
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Submitted on : Saturday, July 28, 2018 - 4:26:26 PM
Last modification on : Monday, February 21, 2022 - 3:38:11 PM
Long-term archiving on: : Monday, October 29, 2018 - 12:34:54 PM


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Zerihun Gedeb Tegegne, Carlos Viana, Jean-Luc Polleux, Marjorie Grzeskowiak, Elodie Richalot. Intrinsic Frequency Response of Silicon–Germanium Phototransistor Associated With 850-nm Multimode Fiber. IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2018, 65 (6), pp.2537 - 2543. ⟨10.1109/TED.2018.2828166⟩. ⟨hal-01850980⟩



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