Growth of Ge islands on SrTiO3 (001) 2×1 reconstructed surface: Epitaxial relationship and effect of the temperature

B. Gobaut (1) , J. Penuelas (1) , A. Benamrouche (1) , Y. Robach (1) , N. Blanc (2) , Vincent Favre-Nicolin (2) , Gilles Renaud (2) , L. Largeau (3) , G. Saint-Girons (1)

1 INL - H&N - INL - Hétéroepitaxie et Nanostructures
2 NRS - Nanostructures et Rayonnement Synchrotron
3 LPN - Laboratoire de photonique et de nanostructures

Domaines: Science des matériaux [cond-mat.mtrl-sci]

B. Gobaut, J. Penuelas, A. Benamrouche, Y. Robach, N. Blanc, et al.. Growth of Ge islands on SrTiO3 (001) 2×1 reconstructed surface: Epitaxial relationship and effect of the temperature. Surface Science : A Journal Devoted to the Physics and Chemistry of Interfaces, 2014, 624, pp.130 - 134. ⟨10.1016/j.susc.2014.02.009⟩. ⟨hal-01848769⟩