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Beyond van der Waals Interaction: The Case of MoSe$_2$ Epitaxially Grown on Few-Layer Graphene

Minh Tuan Dau 1 Maxime Gay 2 Daniela Di Felice 3 Céline Vergnaud 1 Alain Marty 1 Cyrille Beigne 1 Gilles Renaud 4 Olivier Renault 2 Pierre Mallet 5 Toai Le Quang 5 Jean-Yves Veuillen 5 Loïc Huder 6 Vincent Renard 6 Claude Chapelier 6 Giovanni Zamborlini 7 Matteo Jugovac 7 Vitaliy Feyer 7 Yannick Dappe 3 Pascal Pochet 8 Matthieu Jamet 1
1 SPINTEC - SPINtronique et TEchnologie des Composants
2 CEA-LETI - Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information
3 GMT - Groupe Modélisation et Théorie
IRAMIS - Institut Rayonnement Matière de Saclay, SPEC - UMR3680 - Service de physique de l'état condensé
4 NRS - Nanostructures et Rayonnement Synchrotron
MEM - Modélisation et Exploration des Matériaux : DRF/IRIG/MEM
5 QuNES - Nano-Electronique Quantique et Spectroscopie
NEEL - Institut Néel
6 LaTEQS - Laboratoire de Transport Electronique Quantique et Supraconductivité
PHELIQS - PHotonique, ELectronique et Ingénierie QuantiqueS : DRF/IRIG/PHELIQS
7 Forschungszentrum Jülich GmbH
8 LSIM - Laboratory of Atomistic Simulation
MEM - Modélisation et Exploration des Matériaux : DRF/IRIG/MEM
Abstract : Van der Waals heterojunctions composed of graphene and transition metal dichalcogenides have gain much attention because of the possibility to control and tailor band structure, promising applications in two-dimensional optoelectronics and electronics. In this report, we characterized the van der Waals heterojunction MoSe$_2$/few-layer graphene with a high-quality interface using cutting-edge surface techniques scaling from atomic to microscopic range. These surface analyses gave us a complete picture of the atomic structure and electronic properties of the heterojunction. In particular, we found two important results: the commensurability between the MoSe$_2$ and few-layer graphene lattices and a band-gap opening in the few-layer graphene. The band gap is as large as 250 meV, and we ascribed it to an interface charge transfer that results in an electronic depletion in the few-layer graphene. This conclusion is well supported by electron spectroscopy data and density functional theory calculations. The commensurability between the MoSe$_2$ and graphene lattices as well as the band-gap opening clearly show that the interlayer interaction goes beyond the simple van der Waals interaction. Hence, stacking two-dimensional materials in van der Waals heterojunctions enables us to tailor the atomic and electronic properties of individual layers. It also permits the introduction of a band gap in few-layer graphene by interface charge transfer.
Keywords : van der Waals interaction charge transfer commensurability band-gap opening few-layer graphene heterojunction MoSe2
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https://hal.archives-ouvertes.fr/hal-01847258
Contributor : Dominique Girard <>
Submitted on : Monday, July 23, 2018 - 2:00:20 PM
Last modification on : Tuesday, April 6, 2021 - 2:50:03 PM

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CNRS | INAC-SP2M | INAC-SPSMS | DSM-IRAMIS | INAC-SPINTEC | CEA | IRAMIS-SPEC | CEA-UPSAY | DRT | CEA-DRF | LETI | NEEL | IRIG | CEA-GRE | UGA | PHELIQS | IRAMIS

Citation

Minh Tuan Dau, Maxime Gay, Daniela Di Felice, Céline Vergnaud, Alain Marty, et al.. Beyond van der Waals Interaction: The Case of MoSe$_2$ Epitaxially Grown on Few-Layer Graphene. ACS Nano, American Chemical Society, 2018, 12 (3), pp.2319 - 2331. ⟨10.1021/acsnano.7b07446⟩. ⟨hal-01847258⟩

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