Beyond van der Waals Interaction: The Case of MoSe$_2$ Epitaxially Grown on Few-Layer Graphene

Minh Tuan Dau 1 Maxime Gay 2 Daniela Di Felice 3 Céline Vergnaud 1 Alain Marty 1 Cyrille Beigne 1 Gilles Renaud 4 Olivier Renault 2 Pierre Mallet 5 Toai Le Quang 5 Jean-Yves Veuillen 5 Loïc Huder 6 Vincent Renard 6 Claude Chapelier 6 Giovanni Zamborlini 7 Matteo Jugovac 7 Vitaliy Feyer 7 Yannick Dappe 3 Pascal Pochet 8 Matthieu Jamet 1
1 SPINTEC - UMR 8191 - SPINtronique et technologie des composants
2 CEA-LETI - Laboratoire d'Electronique et des Technologies de l'Information
3 GMT - Groupe Modélisation et Théorie
SPEC - UMR3680 - Service de physique de l'état condensé, IRAMIS - Institut Rayonnement Matière de Saclay
4 NRS - Nanostructures et Rayonnement Synchrotron
MEM - Modélisation et Exploration des Matériaux : DRF/INAC/MEM
5 QNES - Nano-Electronique Quantique et Spectroscopie
NEEL - Institut Néel
6 LATEQS - Laboratoire de Transport Electronique Quantique et Supraconductivité
PHELIQS - PHotonique, ELectronique et Ingénierie QuantiqueS : DRF/INAC/PHELIQS
7 Forschungszentrum Jülich GmbH
8 LSim - Laboratoire de Simulation Atomistique
MEM - Modélisation et Exploration des Matériaux : DRF/INAC/MEM
Abstract : Van der Waals heterojunctions composed of graphene and transition metal dichalcogenides have gain much attention because of the possibility to control and tailor band structure, promising applications in two-dimensional optoelectronics and electronics. In this report, we characterized the van der Waals heterojunction MoSe$_2$/few-layer graphene with a high-quality interface using cutting-edge surface techniques scaling from atomic to microscopic range. These surface analyses gave us a complete picture of the atomic structure and electronic properties of the heterojunction. In particular, we found two important results: the commensurability between the MoSe$_2$ and few-layer graphene lattices and a band-gap opening in the few-layer graphene. The band gap is as large as 250 meV, and we ascribed it to an interface charge transfer that results in an electronic depletion in the few-layer graphene. This conclusion is well supported by electron spectroscopy data and density functional theory calculations. The commensurability between the MoSe$_2$ and graphene lattices as well as the band-gap opening clearly show that the interlayer interaction goes beyond the simple van der Waals interaction. Hence, stacking two-dimensional materials in van der Waals heterojunctions enables us to tailor the atomic and electronic properties of individual layers. It also permits the introduction of a band gap in few-layer graphene by interface charge transfer.
Keywords : van der Waals interaction MoSe2 heterojunction few-layer graphene band-gap opening charge transfer commensurability
Type de document :
Article dans une revue
ACS Nano, American Chemical Society, 2018, 12, pp.2319 - 2331. 〈10.1021/acsnano.7b07446〉
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https://hal.archives-ouvertes.fr/hal-01847258
Contributeur : Dominique Girard <>
Soumis le : lundi 23 juillet 2018 - 14:00:20
Dernière modification le : lundi 24 septembre 2018 - 10:56:05

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INAC-SPSMS | INAC-SP2M | DSM-INAC | DSM-IRAMIS | INAC-SPINTEC | CEA | IRAMIS-SPEC | CEA-UPSAY | DRT | CEA-DRF | LETI | UGA | UNIV-PARIS-SACLAY | NEEL

Citation

Minh Tuan Dau, Maxime Gay, Daniela Di Felice, Céline Vergnaud, Alain Marty, et al.. Beyond van der Waals Interaction: The Case of MoSe$_2$ Epitaxially Grown on Few-Layer Graphene. ACS Nano, American Chemical Society, 2018, 12, pp.2319 - 2331. 〈10.1021/acsnano.7b07446〉. 〈hal-01847258〉

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