# Beyond van der Waals Interaction: The Case of MoSe$_2$ Epitaxially Grown on Few-Layer Graphene

3 GMT - Groupe Modélisation et Théorie
IRAMIS - Institut Rayonnement Matière de Saclay, SPEC - UMR3680 - Service de physique de l'état condensé
4 NRS - Nanostructures et Rayonnement Synchrotron
MEM - Modélisation et Exploration des Matériaux : DRF/INAC/MEM
6 LATEQS - Laboratoire de Transport Electronique Quantique et Supraconductivité
PHELIQS - PHotonique, ELectronique et Ingénierie QuantiqueS : DRF/INAC/PHELIQS
8 LSim - Laboratoire de Simulation Atomistique
MEM - Modélisation et Exploration des Matériaux : DRF/INAC/MEM
Abstract : Van der Waals heterojunctions composed of graphene and transition metal dichalcogenides have gain much attention because of the possibility to control and tailor band structure, promising applications in two-dimensional optoelectronics and electronics. In this report, we characterized the van der Waals heterojunction MoSe$_2$/few-layer graphene with a high-quality interface using cutting-edge surface techniques scaling from atomic to microscopic range. These surface analyses gave us a complete picture of the atomic structure and electronic properties of the heterojunction. In particular, we found two important results: the commensurability between the MoSe$_2$ and few-layer graphene lattices and a band-gap opening in the few-layer graphene. The band gap is as large as 250 meV, and we ascribed it to an interface charge transfer that results in an electronic depletion in the few-layer graphene. This conclusion is well supported by electron spectroscopy data and density functional theory calculations. The commensurability between the MoSe$_2$ and graphene lattices as well as the band-gap opening clearly show that the interlayer interaction goes beyond the simple van der Waals interaction. Hence, stacking two-dimensional materials in van der Waals heterojunctions enables us to tailor the atomic and electronic properties of individual layers. It also permits the introduction of a band gap in few-layer graphene by interface charge transfer.
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Type de document :
Article dans une revue
ACS Nano, American Chemical Society, 2018, 12, pp.2319 - 2331. 〈10.1021/acsnano.7b07446〉
Domaine :

https://hal.archives-ouvertes.fr/hal-01847258
Contributeur : Dominique Girard <>
Soumis le : lundi 23 juillet 2018 - 14:00:20
Dernière modification le : jeudi 18 octobre 2018 - 18:40:04

### Citation

Minh Tuan Dau, Maxime Gay, Daniela Di Felice, Céline Vergnaud, Alain Marty, et al.. Beyond van der Waals Interaction: The Case of MoSe$_2$ Epitaxially Grown on Few-Layer Graphene. ACS Nano, American Chemical Society, 2018, 12, pp.2319 - 2331. 〈10.1021/acsnano.7b07446〉. 〈hal-01847258〉

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