Beyond van der Waals Interaction: The Case of MoSe$_2$ Epitaxially Grown on Few-Layer Graphene

Minh Tuan Dau; Maxime Gay; Daniela Di Felice; Céline Vergnaud; Alain Marty; Cyrille Beigne; Gilles Renaud; Olivier Renault; Pierre Mallet; Toai Le Quang; Jean-Yves Veuillen; Loïc Huder; Vincent Renard; Claude Chapelier; Giovanni Zamborlini; Matteo Jugovac; Vitaliy Feyer; Yannick Dappe; Pascal Pochet; Matthieu Jamet

doi:10.1021/acsnano.7b07446

Beyond van der Waals Interaction: The Case of MoSe$_2$ Epitaxially Grown on Few-Layer Graphene

Minh Tuan Dau ¹ Maxime Gay ² Daniela Di Felice ³ Céline Vergnaud ¹ Alain Marty ¹ Cyrille Beigne ¹ Gilles Renaud ⁴ Olivier Renault ² Pierre Mallet ⁵ Toai Le Quang ⁵ Jean-Yves Veuillen ⁵ Loïc Huder ⁶ Vincent Renard ⁶ Claude Chapelier ⁶ Giovanni Zamborlini ⁷ Matteo Jugovac ⁷ Vitaliy Feyer ⁷ Yannick Dappe ³ Pascal Pochet ⁸ Matthieu Jamet ¹

1 SPINTEC - SPINtronique et TEchnologie des Composants

2 CEA-LETI - Laboratoire d'Electronique et des Technologies de l'Information

3 GMT - Groupe Modélisation et Théorie

SPEC - UMR3680 - Service de physique de l'état condensé, IRAMIS - Institut Rayonnement Matière de Saclay

4 NRS - Nanostructures et Rayonnement Synchrotron

MEM - Modélisation et Exploration des Matériaux : DRF/INAC/MEM

5 QNES - Nano-Electronique Quantique et Spectroscopie

NEEL - Institut Néel

6 LaTEQS - Laboratoire de Transport Electronique Quantique et Supraconductivité

PHELIQS - PHotonique, ELectronique et Ingénierie QuantiqueS : DRF/INAC/PHELIQS

7 Forschungszentrum Jülich GmbH

8 LSIM - Laboratory of Atomistic Simulation

MEM - Modélisation et Exploration des Matériaux : DRF/INAC/MEM

Abstract : Van der Waals heterojunctions composed of graphene and transition metal dichalcogenides have gain much attention because of the possibility to control and tailor band structure, promising applications in two-dimensional optoelectronics and electronics. In this report, we characterized the van der Waals heterojunction MoSe$_2$/few-layer graphene with a high-quality interface using cutting-edge surface techniques scaling from atomic to microscopic range. These surface analyses gave us a complete picture of the atomic structure and electronic properties of the heterojunction. In particular, we found two important results: the commensurability between the MoSe$_2$ and few-layer graphene lattices and a band-gap opening in the few-layer graphene. The band gap is as large as 250 meV, and we ascribed it to an interface charge transfer that results in an electronic depletion in the few-layer graphene. This conclusion is well supported by electron spectroscopy data and density functional theory calculations. The commensurability between the MoSe$_2$ and graphene lattices as well as the band-gap opening clearly show that the interlayer interaction goes beyond the simple van der Waals interaction. Hence, stacking two-dimensional materials in van der Waals heterojunctions enables us to tailor the atomic and electronic properties of individual layers. It also permits the introduction of a band gap in few-layer graphene by interface charge transfer.

Keywords : van der Waals interaction MoSe2 heterojunction few-layer graphene band-gap opening charge transfer commensurability

Type de document :

Article dans une revue

ACS Nano, American Chemical Society, 2018, 12, pp.2319 - 2331. 〈10.1021/acsnano.7b07446〉

Domaine :

Physique [physics]

Liste complète des métadonnées

https://hal.archives-ouvertes.fr/hal-01847258
Contributeur : Dominique Girard <>
Soumis le : lundi 23 juillet 2018 - 14:00:20
Dernière modification le : vendredi 22 février 2019 - 15:08:02

Beyond van der Waals Interaction: The Case of MoSe$_2$ Epitaxially Grown on Few-Layer Graphene

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Beyond van der Waals Interaction: The Case of MoSe$_2$ Epitaxially Grown on Few-Layer Graphene

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