High resolution interferometry (HRI) and electronic speckle pattern interferometry (ESPI) applied to the thermomechanical study of a MOS power transistor - Archive ouverte HAL Accéder directement au contenu
Ouvrages Année : 1998

High resolution interferometry (HRI) and electronic speckle pattern interferometry (ESPI) applied to the thermomechanical study of a MOS power transistor

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hal-01840915 , version 1 (16-07-2018)

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  • HAL Id : hal-01840915 , version 1

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K. Nassim, L. Joannes, A. Cornet, Stefan A Dilhaire, Emmanuel Schaub, et al.. High resolution interferometry (HRI) and electronic speckle pattern interferometry (ESPI) applied to the thermomechanical study of a MOS power transistor. pp.227-231, 1998, Therminic: Collection of Papers Presented at the International Worksop on Thermal Investigations of Ics and Microstructures, 2-913329-01-2. ⟨hal-01840915⟩

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